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| CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET GENERAL DESCRIPTION 20V N-Channel Enhancement-Mode MOSFET Vds=20V RDS(ON)=30 m (TYP.) , VGS @2.5V, Ids@5.2A RDS(ON)=22 m (TYP.), VGS @4.5V, Ids@6A FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capacity Fully Characterized Avalanche Voltage and Current Ideal for Li ion battery pack applications APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL Top View N-Channel MOSFET ORDERING INFORMATION Part Number CMT9926G Package SOP-8 *Note: G : Suffix for Pb Free Product 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 1 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise notes) Rating Drain- to- Source Voltage Gate-to-Source Voltage Continuous Drain Current (TJ=150) (TA=25) Pulsed Drain Current Maximum Power Dissipation TA=25 TA=75 Operating Junction Temperature Range Storage Temperature Range Thermal Resistance Junction-ambient (PCB mount) Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing Symbol VDSS VGSS ID IDM PD PD TJ TSTG Rthj-a Value 20 12 6 20 2.0 1.3 -55 to150 -55 to 150 62.5 Unit V V A A W W /W 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 2 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise notes) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistancem Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Test Conditions VGS=0V, ID=-250uA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=VGS, ID=-250uA VDS=10V, ID=6A VDS=20V, VGS=0V VGS=12V VGS=-12V ID=6A VDS=10V VGS=4.5V VDD=10V ID=1A RG=6 VGEN=4.5V VGS=0V VDS=8V f=1.0MHz Min. 20 0.6 7 - Typ. 22 30 13 4.86 0.92 1.4 8.1 9.95 21.85 5.35 562 106 75 Max. 28 40 1 100 -100 - Units V m m V S uA nA nA nC nC nC ns ns ns ns pF pF pF Gate-Source Forward Leakage Gate-Source Reverse Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD Parameter Diode Forward Voltage Max. Diode Forward Current Test Conditions Tj=25 , IS=1.7A, VGS=0V Min. Typ. Max. 1.2 1.7 Units V A Is Notes: Pulse test : Pulse width <300us , duty cycle <2%. 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 3 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET TYPICAL CHARACTERISTICS 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 4 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 5 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET PACKAGE DIMENSION 8-PIN SOP (S08) 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 6 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 7 |
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